IEGT Technology Dramatically Lowers Cost of Ownership

The Injection Enhanced Gate Transistor (IEGT) is a breakthrough

in power switch technology, providing lower cost of ownership.

Features

•  Low Voltage Gate Drive Given that the IEGT is a MOS structure, it can

be gated (turned on/off) with ±15 V

•  Minimal Snubber Circuitry With the high dV/dt capability of the IEGT,

there is only need for a small dc clamp snubber circuit.

•  High-Speed Switching The IEGT is switched at a rate of 500 Hz in this

application.

Benefits

•  High Efficiency and Small Size

A very compact phase leg assembly is achieved with:

• A reduction in snubber circuitry

• Integral forward diodes

• Integral clamp diodes

•  Higher Performance