Features

•  Low Voltage Gate Drive Given that the IEGT is a MOS structure, it can

be gated (turned on/off) with ±15 V

•  Minimal Snubber Circuitry With the high dV/dt capability of the IEGT,

there is only need for a small dc clamp snubber circuit.

•  High-Speed Switching The IEGT is switched at a rate of 500 Hz in this

application.

Benefits

•  High Efficiency and Small Size

A very compact phase leg assembly is achieved with:

• A reduction in snubber circuitry

• Integral forward diodes

• Integral clamp diodes

•  Higher Performance

The reduction in snubber circuitry allows a higher chopping frequency,

lowering the torque ripple applied to the motor and harmonics fed back

into the power system.

•  Motor and Power System Friendly